| 摘要 |
A method for inspecting the presence of foreign particles on a mask comprising the steps of forming alignment marks on a wafer onto which the pattern is trially replicated, aligning projected images by means of the alignment marks to form overlapped images of the pattern of a mask to be inspected and the pattern of another mask in which the light and dark areas are inverted on a photosensitive material on the wafer, and inspecting the exposure status of the photosensitive material on the wafer after development to identify defects such as foreign particles attached to the mask to be inspected.
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