发明名称 |
Process for forming passivation film on photoelectric conversion device and the device produced thereby |
摘要 |
In a process for forming a passivation film on the surface of a photoelectric conversion device having a junction between hydrogenated amorphous silicon and a conductive electrode, the passivation film is formed by the steps of forming a first passivation film of silicon oxide on the surface of the photoelectric conversion device and then forming a second passivation film of silicon nitride on the first passivation film. In this process, the first passivation film is formed under an atmosphere of a mixed gas prepared by mixing an excess of a gas containing oxygen with silane gas in accordance with the plasma CVD method.
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申请公布号 |
US4587171(A) |
申请公布日期 |
1986.05.06 |
申请号 |
US19850726295 |
申请日期 |
1985.04.24 |
申请人 |
FUJI XEROX CO., LTD. |
发明人 |
HAMANO, TOSHIHISA;NAKAMURA, TAKESHI;FUSE, MARIO |
分类号 |
H01L27/146;H01L21/314;H01L21/318;H01L27/14;H01L31/0216;H01L31/09;(IPC1-7):B32B9/04 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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