| 摘要 |
<p>PURPOSE:To prevent stepping, resistance value abnormality, etc., by leaving a multilayered thin film which constitute a transistor (TR) over the entire area of the lower layer of electrode wiring led out through the upper part of TR. CONSTITUTION:A source bus 25, i.e. Al electrode wiring is formed on multilayered fthin film layers 27 and 28, which are formed of extending thin-film materials which constitute TR. Therefore, the wiring passes through no step part and the Al electrode wiring has neither stepping nor resistance value abnormality. Consequently, the electrode wiring is made thin and fine, and the reduction of TR side and the improvement of characteristics are attained.</p> |
