| 摘要 |
PURPOSE:To keep threshold voltage between elements in the same wafer constant, and to prevent the dispersion of Schottky characteristics by simultaneously dry-etching an anti-oxidizing film and a metallic layer. CONSTITUTION:A metallic layer 4 is evaporated to the whole surface 3a of a semiconductor proper 3 obtained by forming an N type active layer 2 to a substrate 1 through sputtering, and an anti-oxidizing film 9 is shaped continuously on the upper side of the metallic layer 4 through sputtering in the same sputtering evaporation device. Since the anti-oxidizing film 9 functions as a protective film, the gate metallic layer 4 is not oxidized even when a wafer is taken out to the outside of the device once during manufacture. A double- layer metallic layer 5 is formed, and the anti-oxidizing film 9 under the mask 5 and the metallic layer 4 are etched to a pattern for a gate electrode 4a. The metallic layer 4 to be etched is shaped under the anti-oxidizing film 9 and is not oxidized at that time, thus generating no dispersion in etching characteristics, then also improving the form of side etching remarkably. |
