| 摘要 |
PURPOSE:To contrive the diversification of the kinds of implanted ions by implanting the second ions with converting the energy of the first ions by the second ions. CONSTITUTION:For the surface of a sample 2 on a sample table 1 in a vacuum container, a gas-state compound or an element 4 is supplied from a nozzle 3 and the sample 2 is irradiated with the accelerated ion beams 5 and consequently the component atoms of the gas-state compound or element 4 are implanted through the surface of sample 2. For example, when the ion beams 5 are accelerated Ga ions and the gas 4 is N2 gas, nitrogen ions can be implanted into the sample 2. Furthermore, when the gas 4 is a compound including As, P, or B, the atoms of it can be implanted through the sample surface. Also, it is possible to obtain the similar function by adsorption of the objective element for implantation or the compound including said element to the surface of sample 2 or by forming it into an extremely thin film like a resist wall cloth or adding it in the film. |
