| 摘要 |
PURPOSE:To lower the resistance of a gate electrode by forming a layer preventing a reaction between a sixth conductive layer and a second conductive layer determining the resistance of a gate electrode in a process in which first and second ohmic contact layers are shaped. CONSTITUTION:A semiconductor active layer 13, a conductive layer 14 and a higher conductive layer 16 are formed to the main surface of a high-resistive substrate 11, and a laminate 32 in which a reaction preventive layer 31 consisting of Cr, Si, O2, etc. is laminated is shaped onto the layer 16. A conductive layer 17 having a pattern being a size smaller than the laminate 32 is shaped under the laminate 32 as a gate electrode 15 together with the conductive layer 16 through etching treatment using the laminate 32 to the conductive layer 14 as a mask. Conductive layers 18 and 19 are each formed onto the semiconductor active layer 13 as a source electrode and a drain electrode while a conductive layer 20 is shaped onto the reaction-preventive layer 31 in the laminate 32, and the semiconductor active layer 13 and the conductive layers 18 and 19 are reacted, thus forming ohmic contact layers 21 and 22. |
