| 摘要 |
A photo-detector includes a photoconductor comprised by a structure similar to a high electron mobility transistor (HEMT) but with the gate removed and the layer of high band gap thinned in order to reduce noise. On a semi-insulating substrate (8), an n-channel layer (9) is disposed and on channel layer (9) is disposed on n+ layer (7). Light incident on the n+ layer (7) causes electron-hole pairs to be generated in layer 9, the electrons and holes of which migrate to oppositely biased contact regions 10 and 11 respectively. The photoconductor is monolithically integrated with an HEMT (TI) (FIG. 3, FIG. 4 or FIG. 6) the latter comprising a pre-amplifier for a receiver circuit. In dependence on the materials chosen the photo-detector may be employed to detect wavelengths of the order of <8.88 mu m or <1.6 mu m. |
