发明名称 PREPARATION OF THIN FILM SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To eliminate defective parts and improve the yields of manufacturing by either scattering away electrode materials of the defective parts or changing them into insulators. This disposal is achieved by making current to flow through the functional domain which shows a inferior index to the reference value. CONSTITUTION:The a-Si battery 1 consisting of several unit cells connected in series is put on a jig 2, and the sequencer 3 controlled by a computor 4 is connected to the jig 2. Under the illumination of a light source 6, the pin 5 contacts the terminal of each functional domain, that is unit cell, and checks its shunt resistance by a measuring instrument 7. When the unit cell showing the lower hunt resistance than the reference value is found, a buzzer produces a sound and the travelling of the jig is halted. Then the switch 8 turns on and the power source 9 makes the current to flow into the unit cell through the pin 5. This current generates heat in the electrically shorted part made by pinhole and the like, which scatters either one of the contacted electrodes, for example metal electrode Al, and eliminates the short circuited state.
申请公布号 JPS6185873(A) 申请公布日期 1986.05.01
申请号 JP19840208653 申请日期 1984.10.04
申请人 FUJI ELECTRIC CO LTD 发明人 UCHIDA YOSHIYUKI;HAMA TOSHIO
分类号 H01L21/66;H01L31/04;H01L31/20 主分类号 H01L21/66
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