发明名称 METHOD AND DEVICE FOR FORMING THIN FILM
摘要 PURPOSE:To obtain a thin film having improved physical properties in a high deposition speed, by impressing a magnetic field having a component in the direction along the plate face of a substrate on which a thin film is formed, generating a gas discharge in a zone in the vicinity of the substrate. CONSTITUTION:The vacuum tank 21, the electrode 22, the gas inlet 24, the heater 26, and the magnet 25 to provide a magnetic field having a component in the direction along the plate face of the substrate 23 are set. The substrate 23 is placed on the electrode 22, a gas at a given pressure is introduced from the gas inlet 24, and the substrate is heated by the heater 26, etc. In this state, when negative voltage or high-frequency voltage is impressed to the electrode 22, discharge is started to generate the plasma 27. The plasma 27 exists locally in the vicinity of the substrate surface due to magnetic field, especially in the zone 28 wherein a magnetic field parallel to the plate face of the substrate exists, and does not extend in the whole vacuum tank. By this localization of the plasma, a high electric current value is obtained even by lowering the voltage between the substrate and the plasma, a formation speed of thin film can be extremely enlarged, and a value >=1,000Angstrom /min is easily obtained.
申请公布号 JPS6126597(A) 申请公布日期 1986.02.05
申请号 JP19840147315 申请日期 1984.07.16
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 SERIKAWA TADASHI;SUYAMA SHIRO;OKAMOTO AKIO;SHIRAI SEIICHI
分类号 C30B25/02;C30B25/00;H01L21/02;H01L21/20 主分类号 C30B25/02
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