| 摘要 |
PURPOSE:To assure the proper function of device or reliability upon the device in spite of any damage to peripheral part of a chip by a method wherein a functional element forming region is enclosed by at least one region without an insulating film near the functional element forming region. CONSTITUTION:A field oxide film 12 is formed on a silicon substrate 11. Firstly an active element and a passive element are also formed on the substrate 11 and after growing a PSG film 13 with high phosphorus concentration by CVD process before Al wiring process, the surface is flattened at high temperature. Secondly regions 14 are formed by removing the PSG film 13 at the width of 10mum on the positions 2mum outside the functional element forming region and after forming an Al wiring 15, a plasma nitride film 16 is formed to be removed as bonding pad region as necessary. Through these procedures, the reliability upon the device may be improved remarkably since the PSG film 13 may not be exposed to the atmosphere unless the circuit functional element forming region is damaged in spite of any damage to the chip end. |
