| 摘要 |
PURPOSE:To eliminate the short-circuit between the lower conductive layer and the upper conductive layer at the stepped part and to eliminate the disconnection of the upper conductive layer by a method wherein the phosphorus-doped insulating film is formed on the first insulating layer in addition to a part, whereon the first conductive layer is formed. CONSTITUTION:An first insulalting layer 13 is formed on a semiconductor substrate 11, wherein a P type or N type diffusion layer 12 is formed, and after a window is opened, a conductive layer 14 is formed. A resist 15 is provided, an etching is performed on the conductive layer 14 and a conductive layer 14a to be used for making contact with the diffusion layer 12 and a conductive layer 14b to be used as the wiring layer are formed. A phosphorus-doped insulating layer 16 is formed on the first insulating layer 13 using an ion-implantation technique. Then, the resists 15 are removed, a second insulating layer 17 is formed, a window to be used for making contact with the insulating layer 17 is opened on the first conductive layer 14a and a second conductive layer 18 is formed on the window and the second insulating layer 17. As the growth rate of the second insulating layer 17 is accelerated by the formation of the phosphorus-doped insulating layer 16, the step difference C of the second insulating layer 17 can be reduced. |
