| 摘要 |
PURPOSE:To form a deep oxide region for isolation in such a manner that an insulating layer having no stepping and a selective oxide region are linked together by a method wherein, using a selective epitaxial growing method, a narrow-widthed insulating layer is buried, and an oxide film is formed by performing a selective oxidizing method. CONSTITUTION:An insulating layer 2 is formed on the main surface of a semiconductor substrate 1, the insulating layer 2 is left in the prescribed region by performing a photoetching method, and the width of the insulating layer 2 is formed in 2mum or below. An epitaxial growing layer 3 having the film thickness enough to bury the insulating layer 2 is formed by performing a selective epitaxial growing method. The layer grown on the insulating layer 2 is thinly formed, and a structure wherein the insulating layer 2 and the oxide film 4 are linked together is obtained. |
