| 摘要 |
PURPOSE:To prevent the generation of disconnections or electromigration by a method wherein the interlayer insulation film is coated with an inhibition film that inhibits the deposition of conductive substances, and a connecting hole is formed in this state; then, a conductive connection layer is formed. CONSTITUTION:An insulation film 2 is formed on a semiconductor substrate 1, and the lower layer wiring 3 is formed thereon. Next, an interlayer insulation film 4 is formed on the film 2 and the wiring 3, and the film 4 is coated with the inhibition film 11 that inhibits the deposition of conductive substances. Successively, connecting holes 11 and 4a are formed in the film 11 and 4 by etching. When a conductive substance is then deposited by deposition, the deposition is blocked on the film 11, and a conductive connection layer 12 is formed by deposition only in the hole 11a and its filling. The film 11 is removed, and the upper layer wiring 13 is formed on the film 4 and the layer 12 and then connected to the wiring 3 by bonding to the layer 12. This manner eliminates the cave in of the upper layer wiring at the part of the connecting hole and can eliminate disconnections or electromigrations. |
