| 摘要 |
PURPOSE:To prevent the deterioration of the gate oxide film by a method wherein an insulating film is formed between the polycrystalline silicon film and the high-melting point metal film or between the polycrystalline silicon film and the silicide film of a high-melting point metal on the activated region. CONSTITUTION:A polycrystalline silicon film 4 and a high-melting point metal film or a silicide film 5 of a high-melting point metal are separated by the formation of an insulating film 16 on the activated region. The connection between the polycrystalline silicon film 4 and the high-melting point metal film 5 or the silicide film of a high-melting point metal is made on the non-active regions, such as the regions whereon thick field oxide films 2 exist. By this method, even through the polycrystalline silicon film on the activated region passes the treating process by heat to be performed hereafter, the polycrystalline silicon film is prevented from being subjected to damage due to the intrusion of the high-melting point metal film or the silicide film of a high-melting point metal by the existence of the insulating film thereon. As a result, the deterioration of the gate oxide film is prevented. |
