| 摘要 |
PURPOSE:To maintain the uniformity of temperature of a silicon substrate by a method wherein the value of the heating power supply ratio between each zone while temperature is rising or falling and the value of the heating power ratio when the prescribed temperature is maintained are differentiated. CONSTITUTION:The ratio with which the power supplied to coils 16a-16c, the temperature of which is rising or falling, is made smaller than the power supplied to the coils 16a-16c, is made lower gradually as the position of the coils is going nearer to the side of an exhaust hole 15 from the side of a gas supply hole 12. As a result, the uniform temperature distribution can be obtained on a silicon substrate 10 in all processes of temperature rising, film formation and temperature falling, and the generation of a slipping defect can be prevented, thereby enabling to form a uniform film. |
