发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To reduce time delay in the transmission of data due to resistance presented by a word line running from a decoder to a memory cell by a method wherein the word line is turned back to contact a gate circuit connected to a line decoder. CONSTITUTION:Word lines W1, W1', W2, W2' are formed into a hair pin before they are connected to a gate circuit 12, and their ends are connected to a line decoder 13 as well. A memory cell 14 is of a static type using a flip-flop. The word line W1 crossing a data line D1-D1 is turned back for use both at the gate of a transistor Q1 and the gate of a transistor Q2.
申请公布号 JPS6185858(A) 申请公布日期 1986.05.01
申请号 JP19840208606 申请日期 1984.10.04
申请人 NEC CORP 发明人 HAYASHI MINEO
分类号 G11C11/41;H01L21/3205;H01L21/8244;H01L23/52;H01L27/10;H01L27/11 主分类号 G11C11/41
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