| 摘要 |
PURPOSE:To obtain the insulation gate type FET capable of performing stable action at high frequency which is difficult to cause current concentration, by eliminating a source region adjacent to a laminated metallic gate electrode. CONSTITUTION:The titled device has a structure that the source region adjacent to a metallic electrode layer 7 wired by selective lamination on an Si gate electrode 4 has been eliminated. the conventional structure caused current easily to concentrate to the part of short channel length because of the generated variability in channel length, leading this device is breakdown on account of current concentration to this part of short channel length at the initial stage of switching. But, the present structure enables stable action at high frequency by elimination of this part. |
