发明名称 MANUFACTURE OF HYBRID INTEGRATED CIRCUIT
摘要 <p>PURPOSE:To facilitate an exchange of defective chips and to uphold the manufacturing yield of a hybrid integrated circuit by a method wherein a defective element in the defective region of the substrate is removed, a new second substrate, whereon the same wiring pattern as that in the circumferencial region of the defective element is performed, and a new element are mounted on the defective region and the new second substrate and the substrate are electrically connected. CONSTITUTION:A defective element 2' in a defective region 4', wherein there exist the defective element 2' and a defective wiring pattern, is removed, a substrate 5, whereon the same wiring pattern as that in the defective region 4' is performed, is bonded on the region 4' and a new element 2'' is mounted. After that, an electric connection between the substrate 1 and the wiring pattern on the substrate 5 is performed using a connecting means, such as bonding wires 6. By this way, even when there exists a damage, which is not correctable, in the wiring and the bonding pad in the defective region, the whole defective region is exchanged with a new one and the hybrid integrated circuit can be easily turned into a non-defective one.</p>
申请公布号 JPS6127642(A) 申请公布日期 1986.02.07
申请号 JP19840147612 申请日期 1984.07.18
申请人 TOSHIBA CORP 发明人 SUZUKI KOHEI;SHIMADA OSAMU
分类号 H01L21/60;H01L21/70;H05K1/14 主分类号 H01L21/60
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