| 摘要 |
PURPOSE:To make the sensitivity characteristic of each element uniform, and to improve the efficiency of light absorption, by a method wherein the positions of the source and gate regions of each picture element of an SIT image sensor are determined at the same time by mask alignment, and the gate diffused region is formed only by the time of heat treatment of the whole process. CONSTITUTION:A buried layer 2 is formed on a p<-> substrate by diffusion or ion implantation. Next, a high-resistant epitaxial grown layer 3 is grown. Then, window-opening etching is done by Wet oxidation over the whole surface, and a junction-isolating region 14 is formed by ion implantation of diffusion over the whole surface. Windows are opened to the parts of the shielding gate 4, control gate 6, source 5, and scanning circuit transistor of the SIT image sensor at the same time, and an oxide film 19 is formed over the whole surface. Thereafter, the shielding gate 4 region and the control gate 6 region of this image sensor and the source 21 region and the drain 22 region of the scanning circuit transistor are formed by boron ion implantation and heat treatment. |
