| 摘要 |
PURPOSE:To reduce the gate leakage current and to increase the drain-gate withstand voltage by a method wherein the film thickness of the first semiconductor layer at the part continuous to a carrier control electrode is made than the film thickness of the first semiconductor layer at the part of a gap between a pair of electrodes electronically connected to the first semiconductor layer and the carrier control electrode. CONSTITUTION:A GaAs layer 11 containing no impurity is grown on a semiinsulation GaAs substrate 10 by molecular ray epitaxy, and next an Si-doped n type AlxGa1-xAs layer 13 is grown; further, Mo 15 is evaporated. Then, a gate region is left by using a photo resist, and the extra portion of Mo is etched with the mask of this region, thus etching the AlxGa1-xAs layer 13. An SiO2 20 is deposited over the whole surface, and source-drain regions 16 are formed by using a photo resist. AuGe/Ni/Au is used as the source-drain metal. The n type laser 13 is thinned at the part of the source (or drain)-gate gap, thus reducing the gate leakage current and then increasing the drain-gate withstand voltage. |
