| 摘要 |
PURPOSE:In the reaction chamber, both of the electrodes are surrounded with a cylindrical wall and the reaction gas is fed through a chamber inside the wall and its outlet into the reaction chamber to prevent the accumulation of amorphous silicon films on the inner wall of the reaction chamber. CONSTITUTION:A reaction gas, e.g., SiH4, is introduced through pipe 20 into the cylindrical reaction gas chamber 18 where the gas is mixed. Then, the mixed gas is jetted from the outlet 19 to almost the middle between two electrode plates 3 and 4. At this time, the switch 7 is turned on to generate glow-discharge plasma with a direct or high-frequency current and form an amorphous silicon film on the surface of the base plate which is placed on the electrode 4. In the process of the present invention, there occurs no accumulation of amorphous silicon films on the inner wall of the reaction chamber 1 and further the uniformity of gas distribution is increased during the glow discharge. When the cylindrical wall 15 is set so that it may be readily demountable, the amorphous silicon films on the inner wall are cleaned off easily. |
