| 发明名称 |
Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition. |
| 摘要 |
<p>A plasma CVD reactor (30) and associated process use tnagnetic field (B) enhancement (54-55) to provide high quality, very high deposition rate metal, dielectric and conformal semiconductor films (5). The reactor and process are designed for automated, high-throughput, in-line small dimension VLSI integrated circuit fabrication, and are applicable to multistep in-situ processing.</p> |
| 申请公布号 |
EP0179665(A2) |
申请公布日期 |
1986.04.30 |
| 申请号 |
EP19850307699 |
申请日期 |
1985.10.24 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
FOSTER, ROBERT;WANG, DAVID NIN-KOU;SOMEKH, SASSON;MAYDAN, DAN |
| 分类号 |
C23C16/50;C23C16/04;C23C16/44;C23C16/455;C23C16/509;C23C16/517;H01J37/32;H01L21/203;H01L21/205;H01L21/31;(IPC1-7):C23C16/50 |
主分类号 |
C23C16/50 |
| 代理机构 |
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