| 摘要 |
PURPOSE:To markedly reduce the rise time and the fall time while the photocurrent is large by heat treatment in vacuum in darkness after electrode formation, regarding the manufacture of the photoconductive element used as the visible region photosensor for reading line-sensors for facsimiles or various kinds of OA apparatus. CONSTITUTION:A thin film made of CdS, CdSe, or the solid solution CdS-CdSe of these kinds of compounds and containing a micro mount of Cu is formed on a substrate, which is then put in a semi-closed container together with the evaporation source of CdCl2. After electrodes are formed by crystal growth and activation through exposure of said thin film to the vapor of CdCl2 at high temperature, the whole is heat-treated in vacuum and dark. The thickness of the thin film is 2,000-10,000Angstrom , and the temperature for crystal growth of 450-600 deg.C. The temperature of treatment in vacuum is preferably 120-200 deg.C. A wide range of vacuum degrees is effective for heat treatment in vacuum, but a degree of 0.01atm or less is preferable. |
