| 摘要 |
<p>PURPOSE:To reduce a chip area and cost thereof by forming accessory pattern such as trademark, name, date of production and the like on an insulating film on metallic wiring. CONSTITUTION:After a prescribed element is formed performing desirable impurity diffusion on a semiconductor substrate 1, an Si oxide film 2 is formed on the surface thereof, then an Al wiring 3 is formed making a window for using an electrode contace. Thereafter, an Si oxide film 4 is formed for the purpose of protecting surface by CVD method. Secondly, accessory pattern such as character, figure, sign and the like are formed at wide and suitable place of the oxide film 4 on the Al wiring 3 when an aperture is made for use of bonding pad in the CVD Si oxide film 4.</p> |
