| 摘要 |
PURPOSE:To anisotropically etch selectively a material to be etched by light emission by using a transparent mask material for a light as a mask layer, and opaquely treating the material for the light. CONSTITUTION:An SiO2 film 12 is accumulated on an Si substrate 11, no element-added polycrystalline Si film 13 is accumulated on the film, and an etching mask 14 is further formed on the film 13. The mask 14 is transparent for ultraviolet light. This sample is heated and annealed in oxygen gas atmosphere. Thus, since the mask 14 becomes opaque for the ultraviolet light, the light is emitted to etch it. The etching of the film 13 is proceeded only at the portion to which the light is emitted. |
