| 摘要 |
PURPOSE:To realize the titled array of high reliability by arranging island-form photoconductive elements formed in an array in the main scanning direction on an insulation substrate and having a specific thickness in the part where the electrodes are formed, and by forming signal lead-out electrodes thereon. CONSTITUTION:After a photoconductive film is evaporated on the insulation substrate 1 by vacuum evaporation, island-form elements 2 in an array are formed in the main scanning direction by photoetching and heat-treated under the saturated vapor pressure of CdCl2. An inversion pattern 5 of the electrode pattern is formed out of photo resist. The thickness of the photoconductive film at the etching part is reduced to 1,000-2,500Angstrom by sputter etching in the plasma of Ar gas containing approx. 10% of O2. NiCr 500Angstrom and Au 650Angstrom are evaporated over the substrate by vacuum evaporation, and the NiCr/Au at the part other than the electrode is lifted off with photo resist, thus forming the electrode. |
