| 摘要 |
PURPOSE: To easily obtain the increase in mobility of a conductive layer at the tempertature of liquid nitrogen, by a method wherein the ion-implanted layer is heat-treated by keeping the annealing temperature at 720-780 deg.C. CONSTITUTION:A sample produced by implanting Si<+> to an Fe-doped semi- insulation InP substrate at room temperature under the condition of ion energy 130keV, dosage 4.0-10<12>cm<-2> is coated with a PSG film and heat-treated for 15min at a prescribed temperature in a hydrogen atmosphere by means of an electric furnace. At this time, using a heat-treatment temperature within a range of 720-780 deg.C can easily lead to the increase in mobility of the conductive layer at the temperature (77K) of liguid nitrogen. |
