| 摘要 |
PURPOSE:To obtain the titled device capable of the increase in density by a method wherein a thin film transistor has a source electrode of a clear conductive film and a drain electrode with an ohmic contact layer of n type amorphous Si, and is composed of a gate insulation film and a gate electrode on an i type amorphous Si formed at the same time with a pin photo diode. CONSTITUTION:Cr turning to a common electrode 2 is evaporated on a glass substrate 1 and patterned in band form. Next, a p-a-Si:H3, an i-a-Si:H4, and an n type amorphous Si 5 are successively formed thereon. Then, each basic element is isolated in island form by etching. The upper surfaces of the n-a-Si:H and the i-a-Si:H at the channel part of the thin film transistor are removed. An SiNx gate insulation film 6 serving as the passivation for the whole is formed, and a window for a pin photo diode serving as the source electrode and a window for the drain electrode are opened. Al turning to the gate elec trode 7 and the drain electrode 8 is evaporated and each patterned into a desired shape. Finally, a clear conductive film 9 of indium tin oxide or the like is evapo rated. |
