| 摘要 |
An insulated gate field transistor has a well region (42) formed in a semiconductor substrate (41) of different conductivity type. The well region (42) has an opening in it so that a part of the substrate (47) extends within it. Source and drain regions (43, 44) are formed in the well region (42) on opposite sides of the opening, with the same conductivity type as the substrate (41). An insulating layer (45) is formed on the surface of the substrate between the source and drain regions (43, 44) and a gate electrode (46) is formed on the insulating layer (45). A potential is applied to the gate electrode (46) to reverse-bias the substrate-well junction and a depletion layer (48) is formed which includes the part of the substrate (41) between the source and drain regions (43, 44). This enables the transistor to have a small body effect, so that it maybe operated with a constant current charac. |
