发明名称 |
STRUTTURA A CIRCUITO INTEGRATO |
摘要 |
The memory cell is a five transistor cell formed with complementary symmetry metal oxide (CMOS) semiconductor insulated gate field effect transistors (IGFETs) in the silicon-on-sapphire (SOS) technology with doped polycrystalline interconnects using buried contacts. Diodes are formed where doped polycrystalline silicon lines form buried contacts to underlying silicon epitaxial regions of opposite conductivity type and where silicon epitaxial regions of opposite conductivity type contact one another. The presence of these diodes has been shown by the inventor to not be detrimental to the operation of the memory cell. |
申请公布号 |
IT1123267(B) |
申请公布日期 |
1986.04.30 |
申请号 |
IT19790025899 |
申请日期 |
1979.09.20 |
申请人 |
RCA CORP. |
发明人 |
ANDREW GORDON FRANCIS DINGWALL |
分类号 |
H01L29/78;H01L21/3205;H01L21/8244;H01L21/86;H01L23/52;H01L23/522;H01L27/10;H01L27/11;H01L27/12;H01L29/786;(IPC1-7):H01L/ |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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