| 发明名称 |
MANUFACTURING METHOD FOR A PLANAR PHOTODIODE WITH HETERO-STRUCTURE |
| 摘要 |
<p>In a method for manufacturing an avalanche photodiode with an epitaxial layer sequence on a carrier body, the carrier body is not the substrate for an epitaxy of the photodiode. One of the epitaxial layers is employed as a selectively etchable mask for generating a pn junction of the diode.</p> |
| 申请公布号 |
CA1203877(A) |
申请公布日期 |
1986.04.29 |
| 申请号 |
CA19830432847 |
申请日期 |
1983.07.20 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
TROMMER, REINER |
| 分类号 |
H01L31/107;H01L31/18;(IPC1-7):H01L31/18 |
主分类号 |
H01L31/107 |
| 代理机构 |
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| 地址 |
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