| 摘要 |
<p>This invention relates to the manufacture of semiconductor devices and more particularly to a method of diffusing an impurity layer into a substrate. The disclosed method comprises the steps of placing a body of semiconductor in a vacuum doping chamber, evacuating air from the chamber, subjecting the body to a dopant in the form of a gas or vapour while simultaneously heating the chamber to at least the diffusion temperature. The diffusion process is controlled by monitoring and controlling the pressure and the temperature of the dopant gas in the chamber. The diffusion method can also be carried out with the further admittance of a reactive gas or with the further admittance of a second dopant gas and a reactive gas together.</p> |
