| 摘要 |
A solid state image sensor including a number of pixels arranged in a matrix form between row lines and column lines, successive pixels being readout by an XY address method to derive an image signal, each pixel being formed by a normally-on type static induction transistor and a vertical type control transistor having a source-drain passage connected to a gate of the static induction transistor, the vertical type control transistor being selectively made conductive during a horizontal blanking period to discharge an excess amount of photocarriers stored in the gate of static induction transistor through the source-drain passage. Since the vertical type control electrode assumes only a very small surface area, the packing density of pixels can be increased materially.
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