| 摘要 |
A semiconductor switching device is disclosed in which a bipolar transistor has a plurality of emitter electrodes and in which each of said emitter electrodes is connected to one of a plurality of MOS transistors (so that the number of MOS transistors corresponds to the number of emitter electrodes of the bipolar transistor). The drains of the MOS transistors are connected in common, and the gate electrode and source electrode of each MOS transistor are each connected in common to the gate electrodes and source electrodes of the other MOS transistors.
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