Grain-driven zone-melting of silicon films on insulating substrates

摘要

A method of growing single crystal layers from polycrystal layers is taught. The method involves forming a eutectic of the polycrystal material and an alloying metal and forming a eutectic bridge between a seed single crystal and the polycrystalline material with the eutectic alloy. The alloy is kept molten and both the single crystal and polycrystal are kept solid at a temperature to induce the eutectic alloy to eat into the polycrystal and to extend the single crystal to form a single crystal layer.