发明名称 Logic and amplifier cells
摘要 Disclosed is a high-speed circuit in which a basic cell includes a high-speed first transistor and a high-speed second transistor. Both the first and second transistors have high gain-bandwidth products. The second transistor is a unipolar (field-effect) device which is connected in a cascode configuration with the first transistor. The unipolar device functions to control the operating point of the first transistor over a range from "on" to "off" as a function of the unipolar device operating at a point over the range from "on" to "off". The unipolar device is controlled by an input voltage signal applied to its gate.
申请公布号 US4586004(A) 申请公布日期 1986.04.29
申请号 US19830508310 申请日期 1983.06.27
申请人 SABER TECHNOLOGY CORP. 发明人 VALDEZ, FRANK A.
分类号 H03F1/02;H03F1/22;H03K17/04;H03K17/567;H03K17/60;H03K17/687;H03K19/0944;H04N5/14;(IPC1-7):H03F3/16 主分类号 H03F1/02
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