| 摘要 |
PURPOSE:To form an oxide film having a controlled compsn. on the surface of an Si substrate at a high speed by bringing a mixture composed of an oxygen source and fluorine source into contact with the Si substrate at an adequate temp. and bringing the formed oxide film contg. F into contact with the oxygen source at an adequate temp. CONSTITUTION:The mixture composed of the oxygen source such as O2, N2O, NO2 or No and the fluorine source such as NF3, F2, HF or XeF2 is brought into contact with the surface of the Si substrate at 0-1300 deg.C, more preferably 400-1000 deg.C under preferably 10<-4>-10<3>atm. to form the oxide film contg. F on the surface of the Si substrate. The content of F in the above-mentioned oxide film is brought into contact with the oxygen source at 0-1300 deg.C, more preferably 400-1000 deg.C under 10<-4>-10<3>atm. to decrease the content of F in the oxide film down to a desired value. |
