| 摘要 |
PURPOSE:To make the titled device have both functions of an isolation of photo charge and a removal of the harmful impurity in the light-receiving region by a method wherein, in the semiconductor photoelectric converter using the SIT as the light-receiving element, narrow grooves are bored in the periphery of the light-receiving element, a diffusion layer for isolation is provided on the wall of each groove, and at the same time, a polycrystalline silicon film is buried in the interior of each groove. CONSTITUTION:An N<-> type layer 42 is made to epitaxially grow on an N<+> type Si substrate 41, the whole surface is covered with an SiO2 film 43, parts of the film 43 are removed in such a way as to correspond to isolation regions 44, and furthermore, V-shaped grooves for isolation to reach up to the substrate 41 are bored in the layer 42 by performing an anisotropic etching and the grooves are filled with P-doped polycrystalline Si films 45. Then, the upper parts of the Si films 45 are covered with SiO2 film 43, P in the Si films 45 is diffused by performing a thermal treatment, N<+> type layers 45 for isolation are formed on the wall surfaces only of the grooves and two P<+> type gate regions 51 are provided in parts of the layer 42, where the encircled with these N<+> type layers 45. After that, a source electrode 55, which comes into contact to the layer 42, is provided between these regions 51 and a gate electrode 54 is provided on the region 51 on one side of the regions 51 through a thin SiO2 film 53. |
