| 摘要 |
PURPOSE:To remove easily a positive type resist when a fine pattern is formed, by irradiating radiation energy beams used in exposure after a thin Al film formed on a substrate is etched. CONSTITUTION:A positive type resist film is formed on a thin Al film formed on a substrate, exposed to radiation energy beams such as ultraviolet rays through a photomask, and developed with an aqueous alkali soln. The Al film covered with the developed resist film is etched. Radiation energy beams used in the exposure are then irradiated on the substrate to convert the unnecessary resist into a compound soluble in said developing soln. by a sensitization reaction. The unnecessary resist film is removed with an aqueous NaOH soln. in a resist removing stage. By this method, Al wiring having a fine pattern formed on the substrate is not broken at all. |
