| 摘要 |
PURPOSE:To eliminate bad influence of a gas released from a substrate on vacuum condition of a ultra-high vacuum chamber, by releasing the gas from the substrate in a substrate feed chamber, and sending the substrate to a growing chamber. CONSTITUTION:The gate valve 20 is closed, and the substrate feed chamber 30 is opened to atmospheric pressure in a state where the growing chamber 10 is kept in an ultra-high vacuum state. In this state, the cassette having the substrate 50 is sent to the substrate feed chamber 30, and the cassette 40 is placed on the cassette receiving stand 61 of the cassette lift 60. Then, the sub strate feed chamber 30 is hermetically sealed, and evacuated by operation of a high vacuum exhaust device. Then, electricity is applied to the heater 81 by the electric source 83, heat is generated by the heater 81, the heat equalizing plate 82 is heated, the substrate 50 put in the cassette 40 is uniformly heated by its radiation, and a gas in the substrate is released. The substrate 50 from which the gas is released is taken out from the cassette 40 by the manipulator 70, sent from the substrate feed chamber 30 through the gate valve 20 to the growing chamber 10 to grow crystal on the substrate and to make a film. |
