| 摘要 |
PURPOSE:To prevent an isolation withstand voltage from decreasing by limiting the growing velocity with a specific single crystal silicon substrate and growing it, thereby avoiding a displacement phenomenon. CONSTITUTION:A (111) single crystal silicon substrate in which one side of triangular etching pit is inclined at 6-10 deg. with respect to a flat orientation is used to grown at growing velocity of 0.7mum/min or lower by a lateral growing device. It is clear that, when the growing velocity is low, a displacement is less. When the inclining angle and the growing velocity are 6-12 deg. and 0.7mum, a displacement becomes 3mum or lower. Since growing by a lateral type growing device, the displacement can be suppressed as compared with the conventional one. Thus, when a bipolar IC is produced, the contact between the isolation and a buried layer is avoided to prevent the isolation withstand voltage from decreasing. |
