| 摘要 |
PURPOSE:To reduce the pattern dimensional error caused by a proximity effect by auxiliarily exposing the nonpattern range of a special pattern periphery by the emitting amount less than the emitting amount D1 necessary to form a pattern. CONSTITUTION:A photoelectric mask 101 and a sample 20 are opposed, an electric field is formed by a DC high voltage power source 31 therebetween, a magnetic field is applied by a focusing magnet 32, ultraviolet ray is emitted to achieve an electron beam equimultiple projection exposure, an electron beam 41 is emitted in the beam emitting amount D0 necessary to form a selective pattern to project and expose the pattern region. Then, an electron pattern transfer is performed by a photoelectric mask 102 having a mask pattern 13, the entire surface of the pattern region and the nonpattern region of the sample 20 is projected and exposed by the beam 42 by 20% of the amount D1. The dimensional variation amount of 0.5mum line of the transferred pattern becomes within 0.06mum, and the dimensional variation amount of the fine pattern caused by the proximity effect is remarkably reduced. |
