| 摘要 |
PURPOSE:To form a semi-insulating GaAs epitaxial layer which does not cause a defect by rich Ga by contacting Bi solution in which one of GaAs and Ga and As are dissolved with a GaAs substrate. CONSTITUTION:A small piece of GaAs and As 4 are dissolved in Bi solution 2. The solution 2 is contacted with a GaAs substrate 1 held at a substrate holder 5. When the temperature is then decreased, the GaAs layer is grown on the substrate 1. When the solution 2 is removed after the setting time, no defect occurs due to rich Ga, and semi-insulating GaAs epitaxially grown layer can be obtained. |
