GATE AND CONTACT OF MOS INTEGRATED CIRCUIT, MUTUAL CONNECTION STRUCTURE AND MAKING THEREOF

摘要

A simplified process for metal gate and contact/interconnect system for MOS VLSI devices employs a refractory metal structure for the gate, including a thick layer of tungsten alone, with stress and adhesion controlled by the deposition conditions. The metal gate receives sidewall oxide spacers during a metal-cladding operation for the source/drain areas. Contacts to the source/drain region include a molybdenum/tungsten stack and a top layer of gold.