GATE AND CONTACT OF MOS INTEGRATED CIRCUIT, MUTUAL CONNECTION STRUCTURE AND MAKING THEREOF

摘要

A metal gate and contact/interconnect system for MOS VLSI devices employs a multiple-level refractory metal structure including a thin layer of molybdenum for adhesion to oxide and a thicker layer of tungsten over the molybdenum. The metal gate is encapsulated in oxide during a self-aligned siliciding operation. A contact to the silicide-clad source/drain region includes a thin tungsten layer, then the molybdenum/tungstem stack, and a top layer of gold.