| 摘要 |
PURPOSE:To change a superlattice structure portion into a single crystal layer of a homogeneous at least ternary compound by forming the superlattice structure of a binary compound single crystal layer on a single crystal substrate and by getting mutually a thermal diffusion between the said crystal layers. CONSTITUTION:After an HgTe single crystal layer 2a and a CdTe single crystal layer 2b are mutually laminated on a CdTe single crystal substrate 1, a superlattice structure 2 is formed. After this substrate is given a thermal treatment in Hg atmosphere at 500 deg.C for about 5min, Hg, Cd and Te which are contained in both the HgTe single crystal layer 2a and the CdTe single crystal layer 2b composing the superlattice structure 2 are respectively diffused and mixed into a homogeneous composition of Hg0.8Cd0.2Te single crystal layer 3. After a zinc sulfide film 4 is coated on this substrate, a photoconductive detecting element is completed through providing electrodes 5 and 6. |
