| 摘要 |
PURPOSE:To obtain a thin film semiconductor element which does not contain a grain region nor a subgrain region which extremely affects the characteristics of the thin film semiconductor element by forming a region which does not contain grain nor subgrain in crystallization. CONSTITUTION:An insulation film 2 is formed on a semiconductor substrate 1 made of silicon and an aperture 12 is provided in the insulation film. A semiconductor layer 3 made of polycrystalline silicon is formed on the aperture and a protection film 4 is formed on the layer 3. A linear heater or a laser beam is used to crystallize the protection film. In this case, flow of heat after melting to cooling and caking is shown by an arrow C. That is, the insulation film 2 is not heat-conductive and the heat flows toward the aperture 12 and then to the semiconductor substrate 1. In this way, crystallization can be controlled by controlling the flow of heat. Since a region A is near the aperture 12 and the direction of crystallization is definite, the crystallization proceeds all alike and uniformly and the generating of a grain region or a subgrain region becomes difficult. |
