| 摘要 |
PURPOSE:To shorten a process for formation of source and drain for CMO Sl C by forming source and drain through driving ion of a counter conducting impurity in one conducting area in utilizing a difference in oxidized film thickness of two areas. CONSTITUTION:A P-well 2 is formed by driving boron B ion selectively in a main surface on n<->-type Si semiconductor substrate 1, and a field oxide film 3 is formed on the other surface. Next, oxide films 4, 5 partly working as gate and polysilicone gates 6, 7 are formed. As is then subjected to ionic driving against the polysilicone gates and at the same time, ion is driven in oxide films on areasI, IIunder an energy condition not to pierce them, the substrate 1 is exposed by etching the film 4 of the areaI, and n<+>-type source 9 and drain 10 are formed by diffusing impurities in the film 5 of the areaII. An oxide film 11 is then formed on the surface, and B ion is driven to obtain P<+>-type source 12 and drain 13. |
