| 摘要 |
PURPOSE:To produce an image sensor with high brightness ratio while highly integrating the array of photoelectric conversion elements by a method wherein one electrode out of a pair of electrodes formed on a substrate is covered and an insulating film with an opening is provided on a photoelectric conversion element region on said electrode. CONSTITUTION:A metallic electrode 2 comprising e.g. Cr film is formed on a substrate 1 and then an insulating film 3 comprising amorphous silicon oxide film etc. covering the metallic electrode 2 is formed. A photoelectric conversion element region above the metallic electrode 2 is provided with an opening 4. A photoelectric conversion film 5 is formed and then a transparent electrode 6 comprising transparent conductive film is formed. Any reflected ray from an original image enters into the photoelectric conversion film 5 through the transparent electrode 6 and resultantly generated photocurrent is picked up externally through the metallic electrode 2. In such a constitution, the effective space of each photoelectric conversion element region is not directly related to the space of metallic electrode 2 but simply depends upon the space of opening 4 formed on the insulating film 3. |
