| 摘要 |
PURPOSE:To obtain a semiconductor device in the high-melting point metal gate structure including the direct contacts with the favorable ohmic characteristics by a method wherein the high-melting point metal gate structure is made into a high-melting point metal multilayer structure, wherein the high-melting point silicide film is inserted in between the high-melting point metal from and the polycrystalline silicon film, and the structure of the semiconductor device is made in the structure, wherein parts of the polycrystalline silicon film are brought into contact to semiconductor substrate. CONSTITUTION:An element isolation region 2 and a gate oxide film 3 are formed on the surface of a P type silicon substrate 1 with the 100 plane; a molybdenum silicide film 7 and a molybdenum film 8 are deposited on a polycrystalline silicon film 5 containing phosphorus diffuses therein by a sputtering method; and the gate electrode structure, wherein the molybdenum silicide film is inserted in between the molybdenum film and the polycrystalline silicon film, is formed according to photo etching. Then, arsenic (As<+>) is ion-implanted using the gate electrode and the element isolation region as masks. Then, after an interlayer insulating film 9 is deposited, a thermal treatment is performed, N type impurity diffusion layers 10 are formed by implanting As<+> ions and the direct contact parts between the high-melting point multilayer gate and the semiconductor substrate are completed. |
